4N35S-TA1 datasheet

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Маркировка

4N35S-TA1
Производитель

Lite-On Technology
Описание

Lite-On Technology 4N35S-TA1 Collector Current (dc) (max): 100mA Collector-emitter Saturation Voltage: 0.3V Collector-emitter Voltage: 30V Configuration: 1 Channel Current - Dc Forward (if): 60mA Current - Output / Channel: 100mA Current Transfer Ratio (max): - Current Transfer Ratio (min): 100% @ 10mA Forward Current: 60mA Forward Voltage: 1.5V ID_COMPONENTS: 3494821 Input Type: DC Isolation Voltage: 3550Vrms Maximum Collector Current: 100 mA Maximum Collector Emitter Saturation Voltage: 0.3 V Maximum Collector Emitter Voltage: 30 V Maximum Fall Time: 10 us Maximum Forward Diode Voltage: 1.5 V Maximum Input Diode Current: 60 mA Maximum Operating Temperature: + 100 C Maximum Power Dissipation: 350 mW Maximum Reverse Diode Voltage: 6 V Maximum Rise Time: 10 us Minimum Operating Temperature: - 55 C Mounting: Surface Mount Mounting Type: Surface Mount Number Of Elements: 1 Number Of Channels: 1 Operating Temp Range: -55C to 100C Operating Temperature Classification: Industrial Output Device: Transistor With Base Output Type: Transistor with Base Package / Case: 6-SMD Package Type: PDIP SMD Pin Count: 6 Power Dissipation: 350mW Reverse Breakdown Voltage: 6V Series: - Vce Saturation (max): 300mV Voltage - Isolation: 3550Vrms Voltage - Output: 30V Other Names: 4N35STA1
Количество страниц

10 шт.
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336,37 KB